Founded in 2019 and based in Foshan Nanhai, Plutosemi Co., Ltd. specializes in high-performance semiconductor materials. As an industry leader, we offer advanced production capabilities and high-quality products such as silicon wafers and SOI, featuring high precision for diverse applications. Our one-stop services and customized solutions meet specific customer needs. Widely used in China, Europe, and the USA, we maintain strong partnerships with renowned international companies, upholding the philosophy of "Customer First, Quality Foremost".
The company maintains industry-leading standards with certifications in high-performance semiconductor materials R&D, production, and sales, supporting its position as a leader in the semiconductor materials sector.
The suitable thickness of a thermal oxide layer depends on its function, electrical requirements, masking performance, etching conditions, and process temperature. Thin oxide films may be used as gate dielectrics or interface layers, while thicker films can provide stronger insulation, surface protection, or diffusion masking.
Low resistance silicon is used when a semiconductor structure requires efficient current conduction, reduced substrate loss, or a reliable ohmic connection. Its low electrical resistance is achieved through controlled doping and is valuable in power devices, backside-contact structures, sensors, test wafers, and selected epitaxial applications.
FZ silicon improves material purity by melting and recrystallizing silicon without direct contact with a quartz crucible. This reduces the introduction of oxygen and other impurities during crystal growth. The result is a high purity float zone wafer with controlled electrical properties, long carrier lifetime, and low contamination potential for demanding semiconductor, detector, sensor, and power device applications.
