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Thin Film Lithium Niobate Wafer

Thin Film Lithium Niobate Wafer

Compound Semiconductor Wafers

Lithium Niobate (LiNbO3) is a compound of niobium, lithium and oxygen. It is a kind of negative crystal with high spontaneous polarization (0.70C /m² at room temperature) and the ferroelectric with the highest Curie temperature (1210 ℃) found so far. These exceptional characteristics make Lithium Niobate wafer highly sought after in a range of applications, particularly in the fields of telecommunications, optoelectronics, and photonics. The material's excellent electro-optic, piezoelectric, and pyroelectric properties make it ideal for devices such as modulators, switches, and sensors, contributing to advancements in data communication and signal processing technologies.
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Products Description

lithium niobate wafer is an inorganic compound crystal material composed of lithium, niobium and oxygen, with the chemical formula LiNbO₃. The crystal belongs to the trigonal crystal structure, with highly ordered atomic arrangement and excellent physical properties. Its crystal growth usually adopts the high-temperature melting method to form a high-purity, large-sized single crystal ingot under strictly controlled conditions, and then it is made into standard specifications of wafers through cutting, grinding, polishing and other processes. As a green and non-toxic electronic material, lithium niobate wafers play an important role in promoting the next generation of information processing technology and sustainable manufacturing.


Lithium Niobate Wafer

Thin Film Lithium Niobate Wafer Specifications

Optical Grade LiNbO3 Wafer

ParameterSpecification
MaterialOptical Grade LiNbO3 Wafers (White or Black)
Diameter2inch/3inch/4inch
Diameter Tolerance±0.03mm
Curie Temp1142±0.2℃
Cutting AngleX/Y/Z etc.
Tol(±)< 0.20 mm ±0.005mm
Thickness0.18 ~ 0.5mm or more
Primary Flat16mm/22mm /32mm
TTV< 3μm
BOW-30
WARP< 40μm
Orientation FlatAll available
Surface TypeSingle Side Polished(SSP) /Double Sides   Polished(DSP)
Polished side Ra< 0.5nm
S/D20/10
Edge CriteriaR=0.2mm C-type or Bullnose
QualityFree of crack (bubbles and inclusions)
Optical dopedMg/Fe/Zn/MgO etc. for optical grade
Wafer Surface CriteriaRefractive index No=2.2878/Ne=2.2033 @632nm wavelength
Contamination      None
Particles @>0.3 μm  ≤30
Scratch , Chipping   None
Defect              No edge cracks, scratches, saw marks, stains
Packing25pcs per box

SAW Grade Lithium Niobate Wafers

ParameterSpecification
MaterialLiNbO3 wafers (White or Black)
Diameter3inch/4inch/inch LN wafer & 8inch under R/D
Diameter Tolerance±0.03mm
Curie Temp1142±2.0℃
Cutting AngleX/Y/Z/Y36/Y41/Y64/Y128/etc.
Tol(±)< 0.20 mm
Thickness0.18 ~ 0.5mm or more
Primary Flat22mm /32mm /42.5mm /57.5mm
LTV (5mmx5mm)< 1μm
TTV< 3μm
BOW-30
WARP< 40μm
PLTV(<0.5um)<>≥95%(5mm*5mm)
Orientation FlatAll available
Surface TypeSingle Side Polished(SSP) /Double Sides Polished(DSP)
Polished side Ra< 0.5nm
Back Side CriteriaGeneral is 0.2-0.5μm or as customized
Edge CriteriaR=0.2mm or Bullnose
Wafer Surface CriteriaTransmissivity  general:5.9x10-11
Contamination       None
Particles @ > 0.3 μm  ≤30
Scratch , Chipping   None
Defect              No edge cracks, scratches, saw marks, stains
Packing25pcs per box



Optical grade LiNbO3 wafers SLN CLN

ParameterSpecification
MaterialOptical Grade LiNbO3 Wafers (White or Black)
Diameter2inch/3inch/4inch
Diameter Tolerance±0.03mm
Curie Temp1142±0.7℃
Cutting AngleX/Y/Z etc.
Tol(±)< 0.20 mm ±0.005mm
Thickness0.18 ~ 0.5mm or more
Primary Flat16mm/22mm /32mm
TTV< 3μm
BOW-30
WARP< 40μm
Orientation FlatAll available
Surface TypeSingle Side Polished(SSP) /Double Sides   Polished(DSP)
Polished side Ra< 0.5nm
S/D10月20日
Edge CriteriaR=0.2mm C-type or Bullnose
QualityFree of crack (bubbles and inclusions)
Optical dopedMg/Fe/Zn/MgO etc. for optical grade   LN < wafers per requested
Wafer Surface CriteriaRefractive index No=2.2878/Ne=2.2033 @632nm wavelength/prism  coupler method.
Contamination      None
Particles @ > 0.3 μm  ≤30
Scratch , Chipping   None
Defect              No edge cracks, scratches, saw marks, stains
Packing25pcs per box


Thin Film Lithium Niobate Wafer Features

1. High spontaneous polarization:

Lithium Niobate Wafer exhibits significant spontaneous polarization at room temperature, with a polarization intensity of up to 0.70 C/m². This polarization state can be maintained without an external electric field and is directional adjustable. Its polarization vector is evenly distributed, and a stable built-in electric field is formed inside the crystal, which helps to enhance the material's performance in electro-optical and nonlinear optical responses.


2. Extremely high Curie temperature:

The Curie temperature of Lithium Niobate Wafer is as high as 1210℃, one of the highest ferroelectric materials discovered so far. Even in extremely high temperature environments, its crystal structure can still maintain good ferroelectric order, and will not depolarize or degrade due to thermal disturbances, showing excellent thermal stability and long-term reliability.


3. Excellent electro-optical effect:

LiNbO₃ wafers have excellent linear electro-optical effect (Pockels effect), that is, the refractive index changes reversibly under the action of an external electric field. This effect has a fast response speed and good linearity, and is suitable for building efficient optical control systems. Its refractive index modulation capability is proportional to the electric field strength, supporting precise control within a wide dynamic range.


4. Good piezoelectric performance:

LiNbO₃ wafers have a high piezoelectric coefficient, can generate electrical signals under mechanical stress, and realize the mutual conversion between electrical energy and mechanical energy. Its electromechanical coupling performance is stable, and it can still maintain good energy conversion efficiency under high-frequency vibration conditions, showing strong dynamic response capabilities.


5. Excellent pyroelectric properties:

LiNbO₃ wafers can release considerable charges when the temperature changes, showing good pyroelectric performance. Its pyroelectric coefficient is high, the response speed is fast, and the signal output is stable. The material can continuously release charges during heating or cooling, and charge attenuation is not easy to occur at room temperature.


6. Low optical absorption loss:

Lithium Niobate Wafer has low optical absorption loss in the visible to near-infrared band, which is conducive to improving the transmission efficiency of optical signals. Its crystal structure is dense and its defect density is low, so that photons are less affected by scattering and absorption during propagation, thus ensuring high-quality light transmission performance.


7. Strong structural stability:

LiNbO₃ wafers have a dense and stable crystal structure, which is not prone to structural deformation or defect expansion during processing and use. Its lattice arrangement is regular, and its thermal shock resistance and corrosion resistance are good. It can maintain structural integrity in a variety of physical and chemical environments and is suitable for multiple treatments in complex process flows.


8. Green and environmentally friendly materials:

LiNbO₃ wafers do not contain lead or other toxic heavy metal elements, which meets the requirements of modern electronics industry for environmentally friendly materials. Its preparation process is controllable, and waste disposal is relatively safe, which is suitable for the application and promotion of green manufacturing and circular economy models. At the same time, the material itself is harmless to the human body, easy to recycle and reuse, and in line with the trend of sustainable development.

Thin Film Lithium Niobate Wafer Process Flow

1. Single crystal growth:

The production of Lithium Niobate Wafer begins with the growth of high-quality single crystals. Usually, the Czochralski pulling method or the Bridgman directional solidification method is used to melt the high-purity raw materials in a high-temperature furnace and then slowly cool and crystallize. By precisely controlling the temperature gradient and growth rate, a large-size, low-defect density single crystal ingot is obtained, laying the foundation for subsequent processing.


2. Directional cutting and crystal surface treatment:

The grown LiNbO₃ crystal needs to be determined by X-ray diffraction to determine the crystal axis direction, and then a diamond saw blade is used to accurately cut it into wafers according to a specific crystal direction. This process must avoid introducing cracks and residual stress to ensure the integrity of the crystal structure and the consistency of anisotropic properties.


3. Surface grinding and rough polishing:

The cut wafer enters a multi-stage grinding process, and abrasives of different particle sizes are used in turn to remove the surface damage layer. Rough polishing is then performed to further flatten the surface and reduce scratches. This step directly affects the thickness accuracy and surface quality of the final wafer.


4. Precision polishing and cleaning:

The fine polishing process uses ultra-fine polishing liquid and soft polishing pads to make the wafer surface smooth at the nanometer level. After polishing, the wafer needs to undergo multiple ultrasonic cleaning and deionized water rinsing to remove residual particles, metal ions and organic pollutants to ensure that the surface cleanliness meets the requirements of high-precision device manufacturing.


5. Quality inspection and packaging:

Finally, the wafer is tested for multiple parameters such as thickness, resistivity, surface roughness, and crystal defects. Optical microscopes, AFM, XRD and other means are used to evaluate product quality. Qualified wafers are classified and packaged according to customer needs, and are stored and transported in an anti-static and vacuum-sealed manner to ensure their stability and reliability during circulation.


Thin Film Lithium Niobate Wafer Application

1. Piezoelectric application:

Lithium Niobate Wafer has excellent piezoelectric properties, can generate electrical signals under mechanical stress, and realize efficient conversion between electrical energy and mechanical energy. Its stable electromechanical coupling coefficient and broadband response characteristics make it widely used in the manufacture of piezoelectric devices such as high-frequency acoustic wave devices, resonators and sensors, and perform well in precision measurement and signal processing.


2. Optical applications:

Lithium Niobate Wafer has good light transmittance and significant nonlinear optical effects, and is suitable for applications such as laser frequency conversion, light modulation and optical parametric amplification. Its refractive index is highly tunable, supports the propagation of multiple optical modes, and exhibits excellent optical properties in the infrared to visible light range. It is an important material for high-performance optical systems.


3. Dielectric superlattice field:

Lithium Niobate Wafer can construct a dielectric superlattice structure through periodic poling technology to achieve precise control of nonlinear optical processes. This structure can optimize quasi-phase matching conditions and improve the efficiency of second harmonics. It has wide application value in nonlinear optics, quantum optics and optical frequency conversion.


4. Acoustic application:

LiNbO₃ wafers are widely used in the manufacture of acoustic devices, such as high-frequency surface acoustic wave (SAW) filters and transducers, due to their good piezoelectric properties. With stable sound velocity and low loss, they are suitable for technical scenarios that require high-precision sound wave control, such as wireless communication, radio frequency identification, and ultrasonic imaging.


5. Optical communication application:

LiNbO₃ wafers have high-speed electro-optical response capabilities and are the core material of optical modulators in optical communication systems. Its low insertion loss and high bandwidth characteristics enable it to effectively realize the intensity, phase or frequency modulation of laser signals, supporting the data transmission needs of high-speed optical fiber communication networks.


6. Photonic integrated chip:

LiNbO₃ thin film wafers are gradually becoming an important platform material for photonic integrated chips. Its excellent optical properties combined with micro-nano processing characteristics can be used to construct components such as waveguides, optical switches, and optical isolators, promoting the development of high-performance and miniaturized photonic integrated circuits, especially showing great potential in silicon-based optoelectronic heterogeneous integration.


Packaging and Transportation

The packaging should be able to withstand the impact, vibration, stacking and extrusion that may be encountered during transportation, while also it has to easy to load, unload and handle.

We use professional wafer box packaging. The wafer box is protected by a double layer bag, the inside is a PE bag that can be dust-proof, and the outside is a aluminum foil bag that can be isolated from the air. The two-layer bags are vacuum-packed. 

We will choose carton models according to different sizes of products. And between the product and the carton filled with shock-proof EPE foam, play a comprehensive protection. 

Finally choose air transport to reach the customer's hands. This allows customers in any country and region to receive the product in the fastest time.

We comply with the Material Safety Data Sheet (MSDS) rules to ensure that the products transported are free of harmful substances and will not cause environmental pollution and explosion and other possible hazards.


Packaging and Transportation

Enterprise Strength

Factory Area: 3000 sq


Process:

1. Shaping→2. Edge Profile→3. Lapping→4. Polishing→5. Cleaning→6. Packing→7. Transportation


Capacity:

Glass Wafer --- 30K pcs 

Silicon Wafer --- 20K pcs 

(Equal to 6in) 


Enterprise Strength

Quality Assurance

Quality inspection method: Product inspection in accordance with SEMI standard or according to customer's requirements, together with product COA.


Warranty period: In accordance with the contract requirements.


Quality system management:

●Organize production according to ISO9001 and other quality system standards.

Quality management system and measures:

●Establish a strict quality assurance system, the heads of all departments and quality engineers to ensure the coordinated operation of the quality system.

●Strengthen the quality inspection system, strengthen the process quality control

●Strict material quality control, ensure that the input materials meet the design requirements and technical specifications.

●Implement a timely filing system for technical data to ensure that all processing technical data is complete/accurate.


Quality control in the production stage:

●Production preparation stage: carefully organize relevant personnel to learn product drawings and technical rules, and improve the technical level of employees.

●Quality control of the production process: the implementation of a strict handover system, the previous step of the process to the next step of the transfer, should be detailed processing. At the same time, strengthen the quality inspection system to ensure the quality of each step of the process.

●Quality acceptance: All processes must be quality acceptance before proceeding to the next process.


Quality Assurance

Pre-sales and After-sales

Pre-sales Service

Professional technical support and commercial team to help you determine product specifications according to product use, and issue specifications.


On-purchase Service

Produce products according to the confirmed specifications and our process.


After Sale Service

We will respond to any product problems encountered by customers or process problems encountered by customers within 24 hours. We can choose from various forms of service, such as email, video conference and so on.


About Us PLUTOSEMI

Plutosemi Co., Ltd.  was established in 2019, headquartered in Nanhai, Foshan, focusing on the research and development, production, and sales of high-performance semiconductor materials. 

Advanced production capacity: We have three major production bases in China, with a monthly production capacity of 100000 equivalent 6-inch silicon wafers and 30000 equivalent 8-inch glass wafers, ensuring stable and efficient product supply for our customers.

High quality products: We provide efficient and stable product supply innovative solutions in the fields of glass wafers, silicon polishing wafers, epitaxial wafers (EPI), silicon on insulator wafers (SOI), and more. Our silicon wafers have the characteristics of ultra-thin, ultraflat, and high-precision, which can meet the needs of various high-end applications. Our glass and quartz substrates are also renowned for their high smoothness and precise aperture design.

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