Search PLUTOSEMI Products

Fused silica is generally preferred for deep-UV optics, high thermal stability, and low thermal expansion. Borosilicate glass offers a practical balance of optical performance, thermal resistance, and cost, while quartz glass selection depends on its material structure, purity, and grade.

FZ silicon improves material purity by melting and recrystallizing silicon without direct contact with a quartz crucible. This reduces the introduction of oxygen and other impurities during crystal growth. The result is a high purity float zone wafer with controlled electrical properties, long carrier lifetime, and low contamination potential for demanding semiconductor, detector, sensor, and power device applications.

Float zone silicon is a high-purity single-crystal material produced without using a quartz crucible during the main melting and refining stage. The absence of direct contact with a crucible helps reduce oxygen and carbon contamination.

UV fused silica wafer is a high-purity, amorphous silicon dioxide substrate engineered for ultraviolet optical transmission, dimensional stability, and low fluorescence. Unlike crystalline quartz, fused silica has no long-range crystal structure, giving it uniform optical behavior and low birefringence.

Quartz wafers have become indispensable in the semiconductor industry, where precision, stability, and high performance are paramount. Unlike traditional silicon wafers, quartz wafers offer unique advantages that make them ideal for specific applications such as high-temperature processing and optical systems.

The core raw material for a solar wafer is high-purity silicon, and that silicon starts much earlier in the supply chain as quartz, which is silicon dioxide. In industrial production, quartz is reduced with carbon in an electric arc furnace to make metallurgical-grade silicon.

Quartz (SiO₂) is resistant to acids, alkalis, and corrosion, making it suitable for use in harsh process environments. Quartz wafers feature an extremely low thermal expansion coefficient (approximately 0.55×10⁻⁶/℃), which is close to that of silicon (2.6×10⁻⁶/℃). This similarity significantly reduces thermal stress issues during semiconductor processes.

During the annealing process of optical glass, the inevitable temperature difference between the center and the edge generates stress, also known as residual stress. Stress causes the glass to change from isotropic to anisotropic and produce birefringence.