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What Is the Size of Through Silicon Via?

2025-11-21

Through Silicon Via is a vertical interconnect structure used in advanced semiconductor packaging to link multiple stacked chips. As microelectronics continue to evolve toward higher density and faster signal transmission, understanding the dimensional range of this structure becomes essential for engineers, designers, and system integrators. The size of a TSV affects electrical performance, thermal behavior, mechanical reliability, and overall manufacturing cost. This article explains the typical size range, the factors that determine the dimensions, and how these parameters influence real-world applications. It also highlights how specialized manufacturers such as Plutosemi support optimized TSV solutions for next-generation devices.

Typical Size Range of TSV

The dimensions of Through Silicon Via vary depending on process technology, wafer thickness, design purpose, and interposer architecture. In modern semiconductor fabrication, the diameter of a via is generally kept small to improve integration density, but large enough to guarantee mechanical stability and consistent filling quality.

Common TSV size ranges include:

ParameterTypical Range
Via Diameter2–10 μm for fine-pitch designs; 20–50 μm for mainstream stacking
Via Depth30–150 μm based on wafer thinning level
Aspect Ratio5:1–10:1 in most production processes
Pitch Distance20–100 μm depending on layout density

These values represent mainstream industry specifications. Ultra-fine TSV architectures push diameters down to the 2–5 μm level, used in high-bandwidth memory and advanced logic stacking. Larger TSVs in the 30–50 μm range remain common in power devices, MEMS packaging, and sensor modules.

Factors Influencing TSV Size

The size of a TSV is not fixed; instead, it is shaped by performance needs and manufacturing constraints. Several key factors determine the final dimensions.

Electrical Performance

A smaller TSV reduces parasitic capacitance and inductance, enabling higher signal speed and lower delay. The trade-off is that extremely small geometries increase fabrication complexity. For power delivery networks, larger vias improve current-carrying capacity and reduce resistive losses.

Mechanical Strength

The depth, diameter, and wall thickness must support wafer stability during thinning and stacking. A TSV that is too small or too tall may introduce stress concentration, leading to cracking or delamination. Larger vias are often preferred in MEMS and sensor structures to achieve a stronger mechanical bond.

Thermal Conductivity

TSVs play a role in heat dissipation. Wider vias filled with conductive materials such as copper provide better thermal pathways. In heat-sensitive applications, the trade-off between electrical density and thermal efficiency must be considered.

Manufacturing Capability

Etching, via filling, and electroplating impose practical limits. Many foundries maintain reliable mass-production capability in the 5–50 μm diameter range. As production equipment advances, finer TSVs become possible, but yield and cost remain major considerations.

TSV Size in Different Application Fields

TSV technology supports a wide range of electronic components. The required via size differs based on the function of the device.

High-Bandwidth Memory

HBM modules typically use TSV diameters in the 2–10 μm range to achieve dense stacking and short vertical signal paths. This reduces latency and supports very high data throughput.

3D Logic-Logic Integration

When stacking CPUs or combining logic processors with AI accelerators, medium-sized vias between 5–20 μm offer a balance between electrical performance and manufacturability. The pitch remains small to support thousands of interconnects.

MEMS and Sensor Devices

MEMS components often use larger TSVs around 30–50 μm for structural stability and simplified bonding. The design prioritizes mechanical durability over ultra-fine electrical routing.

Power Devices and RF Modules

Power handling applications integrate TSVs in the 20–40 μm range to accommodate higher currents and improve thermal distribution. RF substrates may adopt similar sizes to reduce loss.

Silicon Interposers

2.5D interposers use a broad range from 5–40 μm, depending on whether the interposer is designed for high-density logic, memory, or general signal redistribution. Thinner vias help minimize latency while maintaining layout flexibility.

How TSV Size Affects Device Performance

The selection of TSV dimensions directly shapes the overall behavior of a semiconductor system. Smaller vias enable tighter integration and higher computation density, while larger vias enhance mechanical and thermal reliability. Engineers consider parasitics, impedance, filling quality, thermal paths, and structural load when choosing the optimal size.

Advanced manufacturing companies such as Plutosemi provide optimized TSV fabrication capabilities for different device categories. Their engineering support helps designers choose the most efficient via diameter and depth combination, ensuring both electrical performance and high-yield manufacturing.

Common Questions About TSV Size

Does a smaller TSV always improve performance?

Not always. Smaller vias reduce parasitics but increase fabrication difficulty. Yield and structural reliability must remain balanced.

What limits the minimum TSV diameter?

Plasma etching resolution, photoresist patterning accuracy, filling uniformity, and the ability to maintain high aspect ratios limit how small a via can be reliably produced.

How does TSV size impact cost?

Finer vias require more advanced lithography and plating control, increasing manufacturing cost. Larger vias are easier to produce but reduce layout density.

Can TSV size vary on the same wafer?

Yes. Different functional regions may require different via structures, especially in mixed-signal or multi-function devices.

Will TSVs continue to shrink in the future?

Yes. As 3D integration grows, more manufacturers will push TSV diameters below 5 μm, although mass-production consistency will remain a technical challenge.

Conclusion

The size of a Through Silicon Via varies widely depending on application requirements, typically ranging from 2 to 50 μm in diameter with aspect ratios between 5:1 and 10:1. These dimensions influence electrical characteristics, thermal efficiency, mechanical strength, and cost. Understanding the appropriate TSV size helps engineers design reliable high-performance semiconductor systems. For companies seeking advanced TSV solutions tailored to logic, memory, MEMS, or interposer applications, Plutosemi offers specialized expertise and manufacturing capability to support next-generation electronic devices.


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