SiC wafer grade matters because silicon carbide devices often operate under high voltage, high temperature, high frequency, or harsh electrical stress. A substrate defect may look small during incoming inspection, but it can become a leakage path, epitaxy defect, breakdown point, yield loss, or long-term reliability risk after device fabrication.
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2026-06-19
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2026-05-28SiC wafer grade matters because silicon carbide is often used in devices that must handle high voltage, high temperature, high frequency, or harsh operating conditions. A small substrate defect may not look serious during incoming inspection, but it can become a leakage path, breakdown point, epitaxy issue, or reliability risk after device fabrication.